| Manufacturer : | Toshiba Semiconductor and Storage |
| Manufacturer Part No : | TPN11006NL,LQ |
| Enrgtech Part No : | ET10837336 |
| Product Range : | PolySwitch RXEF Series |
Toshiba Semiconductor and Storage TPN11006NL,LQ
MOSFET N-CH 60V 17A 8TSON
Product Information
| FET Feature | : | - |
| HTSUS | : | 8541.29.0095 |
| Vgs(th) (Max) @ Id | : | 2.5V @ 200µA |
| Operating Temperature | : | 150°C (TJ) |
| Package / Case | : | 8-PowerVDFN |
| Rds On (Max) @ Id, Vgs | : | 11.4mOhm @ 8.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | : | 23 nC @ 10 V |
| RoHS Status | : | RoHS Compliant |
| FET Type | : | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | : | 4.5V, 10V |
| rohs | : | RoHS Compliant |
| Package | : | Tape & Reel (TR) |
| Drain to Source Voltage (Vdss) | : | 60 V |
| Vgs (Max) | : | ±20V |
| Moisture Sensitivity Level (MSL) | : | 1 (Unlimited) |
| Power Dissipation (Max) | : | 700mW (Ta), 30W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | : | 2000 pF @ 30 V |
| Product Status | : | Active |
| Mounting Type | : | Surface Mount |
| Series | : | U-MOSVIII-H |
| Supplier Device Package | : | 8-TSON Advance (3.1x3.1) |
| Mfr | : | Toshiba Semiconductor and Storage |
| Current - Continuous Drain (Id) @ 25°C | : | 17A (Tc) |
| Technology | : | MOSFET (Metal Oxide) |
| Base Product Number | : | TPN11006 |
| ECCN | : | EAR99 |
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